The A1SHB uses advanced trench It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications .
A1SHB-FEATURES
VDS = -20V, ID = -3A
RDS(ON) < 110mΩ @ VGS=4.5V
Available in a 3-Pin SOT23-6 Package
